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| Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOSTM=Power Transistor = Feature *=New revolutionary high voltage technology * Worldwide best R DS(on) in TO 220 * Ultra low gate charge *=Periodic avalanche rated * Extreme dv/dt rated *=High peak current capability *=Improved transconductance *=150 C operating temperature P-TO262-3-1 C OLMOS O Power Semiconductors Product Summary VDS @ Tjmax RDS(on) ID P-TO263-3-2 650 0.38 11 V A P-TO220-3-1 Type SPP11N60C3 SPB11N60C3 SPI11N60C3 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4395 Q67040-S4396 Q67042-S4403 Marking 11N60C3 11N60C3 11N60C3 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC = 25 C TC = 100 C Symbol ID Value 11 7 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.5A, VDD =50V ID puls EAS EAR IAR dv/dt VGS VGS Ptot Tj , Tstg Page 1 33 340 0.6 11 6 20 30 125 -55... +150 W C A V/ns V mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =11A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =11A, VDS <=VDD, di/dt=100A/s, Tjmax =150C Gate source voltage static Gate source voltage dynamic Power dissipation, TC = 25C Operating and storage temperature 2001-07-05 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold RthJC RthJA RthJA SPP11N60C3, SPB11N60C3 SPI11N60C3 Symbol min. - Values typ. 35 max. 1 62 62 1 260 Unit K/W W/K C Electrical Characteristics, at Tj = 25 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA V(BR)DSS V(BR)DS VGS(th) IDSS 600 2.1 700 3 3.9 V Drain-source avalanche breakdown voltage VGS =0V, ID =11A Gate threshold voltage, VGS = VDS ID = 0.5 mA Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 C VDS = 600 V, VGS = 0 V, Tj = 150 C A 25 250 100 nA 0.34 1.1 0.86 0.38 1.22 - Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) - Drain-source on-state resistance VGS =10V, ID=7A, Tj=25C VGS =10V, ID=7A, Tj=150C Gate input resistance f = 1 MHz, open drain RG - 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Values min. typ. 8.3 1460 610 21 45 85 10 5 44 5 max. 70 9 ns pF S pF Unit Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 2) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =480V, ID =11A, VGS =0 to 10V VDD =480V, ID =11A Symbol Conditions g fs Ciss Coss Crss V DS2*I D*R DS(on)max , ID=7A V GS=0V, V DS=25V, f=1MHz - Effective output capacitance, 1) Co(er) V GS=0V, V DS=0V to 480V t d(on) tr t d(off) tf V DD=380V, V GS=0/10V, ID=11A, R G=6.8 - - 5.5 22 45 5.5 60 - nC V(plateau) VDD =480V, ID =11A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Values min. typ. 1 400 6 41 1200 max. 11 33 1.2 600 V ns C A A/s A Unit Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt V GS=0V, I F=IS V R=480V, I F=I S , diF/dt=100A/s Symbol Conditions IS ISM TC=25C - Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.015 0.034 0.056 0.124 0.143 0.057 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0002121 0.0007091 0.001184 0.00254 0.011 0.092 Ws/K Unit Symbol Value typ. Unit Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2001-07-05 Preliminary data 1 Power dissipation Ptot = f (TC ) SPP11N60C3 SPP11N60C3, SPB11N60C3 SPI11N60C3 2 Drain current ID = f (TC ) parameter: VGS 10 V 12 SPP11N60C3 140 W 120 110 A 10 9 100 Ptot ID 7 6 5 4 3 2 1 20 40 60 80 100 120 90 80 70 60 50 40 30 20 10 0 0 8 C 160 0 0 20 40 60 80 100 120 C 160 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC =25C 10 2 SPP11N60C3 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP11N60C3 K/W A tp = 13.0s 10 0 /I D ID on ) = V 10 1 DS ( Z thJC 100 s 10 -1 R DS 10 -2 D = 0.50 0.20 10 0 1 ms 10 -3 0.10 0.05 10 ms 10 -4 DC 10 -1 0 10 1 2 3 single pulse 0.02 0.01 10 10 V 10 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 5 tp 2001-07-05 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 10 s, VGS 40 SPP11N60C3, SPB11N60C3 SPI11N60C3 6 Typ. output characteristic ID = f (VDS ); Tj=150C parameter: tp = 10 s, VGS 22 A 32 28 20V 10V 8V 7V A 18 16 20V 8V 7V 7.5V 6V ID ID 24 20 6,5V 14 12 5.5V 6V 10 8 5V 16 12 8 4 0 0 5,5V 6 4.5V 5V 4,5V 4 4V 2 0 0 5 10 15 3 6 9 12 15 18 21 27 V VGS V VDS 25 7 Typ. drain-source on resistance RDS(on) =f(ID ) parameter: Tj =150C, VGS 2 8 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 7 A, VGS = 10 V 2.1 SPP11N60C3 1.8 4V 4.5V 5V 5.5V 6V R DS(on) RDS(on) 1.6 1.6 1.4 1.2 1.4 1.2 1 0.8 0.6 1 0.8 98% 0.6 6.5V 8V 20V 2 4 6 8 10 12 14 16 0.4 0.2 0 -60 typ 0.4 0 A 20 ID -20 20 60 100 C 180 Tj Page 6 2001-07-05 Preliminary data 9 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 40 SPP11N60C3, SPB11N60C3 SPI11N60C3 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 0.5 mA 5 A 25C V 4 32 28 max. V GS(th) 3.5 3 2.5 2 1.5 1 0.5 0 -60 ID 24 20 16 12 8 4 0 0 typ. 150C min. 2 4 6 8 10 12 V 15 VGS -20 20 60 100 C 160 Tj 11 Typ. gate charge VGS = f (QGate ) parameter: ID = 11 A pulsed 16 SPP11N60C3 12 Forward characteristics of body diode IF = f (VSD ) parameter: Tj , tp = 10 s 10 2 SPP11N60C3 V A 12 V GS 10 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 0,2 VDS max 10 1 0,8 VDS max 4 2 0 0 10 20 30 40 50 nC 70 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate Page 7 VSD 2001-07-05 Preliminary data 6.8 Typ. switching time t = f (ID), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V, RG =6.8 70 SPP11N60C3, SPB11N60C3 SPI11N60C3 13 Typ. switching time t = f (RG ), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V, ID=11 A 350 ns ns 60 55 50 45 td(off) 250 t t 40 35 30 25 20 15 10 5 0 0 tr tf td(on) 200 150 td(off) td(on) tr tf 100 50 2 4 6 8 A ID 12 0 0 10 20 30 40 50 RG 70 14 Typ. drain current slope di/dt = f(RG ), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=11A 3000 15 Typ. drain source voltage slope di/dt = f(RG ), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=11A 130000 V/ns A/s 110000 100000 di/dt 2000 dv/dt 90000 80000 70000 1500 60000 50000 1000 di/dt(off) 40000 30000 20000 dv/dt(on) dv/dt(off) 500 di/dt(on) 10000 0 0 20 40 60 80 RG 120 0 0 10 20 30 40 50 RG 70 Page 8 2001-07-05 Preliminary data 16 Typ. switching losses E = f (ID ), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, RG =6.8 0.04 *) E on includes SDP06S60 diode commutation losses. SPP11N60C3, SPB11N60C3 SPI11N60C3 17 Typ. switching losses E = f(RG ), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V, ID=11A 0.24 *) Eon includes SDP06S60 diode commutation losses. mWs mWs 0.03 0.16 E 0.02 E 0.025 Eon* 0.12 Eoff 0.015 0.08 0.01 Eoff 0.005 Eon* 0.04 0 0 2 4 6 8 A ID 12 0 0 10 20 30 40 50 RG 70 18 Avalanche SOA IAR = f (tAR ) par.: Tj 150 C 11 19 Avalanche energy EAS = f (Tj ) par.: ID = 5.5 A, VDD = 50 V 350 A mJ 9 8 7 6 5 4 3 2 50 1 0 -3 10 10 -2 T j(START)=125C Tj(START)=25C 250 E AS 200 150 100 -1 0 1 2 4 s 10 tAR I AR 10 10 10 10 0 20 40 60 80 100 120 C 160 Tj Page 9 2001-07-05 Preliminary data 20 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP11N60C3 SPP11N60C3, SPB11N60C3 SPI11N60C3 21 Avalanche power losses PAR = f (f ) parameter: EAR =0.6mJ 300 720 V W V(BR)DSS 680 P AR 660 640 200 150 620 600 580 50 560 540 -60 04 10 100 -20 20 60 100 C 180 10 5 Tj MHz f 10 6 22 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 23 Typ. Coss stored energy Eoss=f(VDS ) pF Ciss 10 3 J 7.5 6 5.5 E oss 10 2 5 4.5 4 C Coss 3.5 3 2.5 10 1 Crss 2 1.5 1 0.5 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Page 10 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Definition of diodes switching characteristics Page 11 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO220-3-1 P-TO220-3-1 dimensions symbol min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 [mm] max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 [inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520 2.54 typ. 4.30 4.50 1.17 2.30 1.40 2.72 0.1 typ. 0.1693 0.1772 0.0461 0.0906 0.0551 0.1071 TO-263 (DPak/P-TO220SMD) dimensions symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z 9.80 0.70 1.00 1.03 [mm] max 10.20 1.30 1.60 1.07 min 0.3858 0.0276 0.0394 0.0406 [inch] max 0.4016 0.0512 0.0630 0.0421 2.54 typ. 0.65 0.85 5.08 typ. 4.30 4.50 1.17 9.05 2.30 1.37 9.45 2.50 0.1 typ. 0.0256 0.0335 0.2 typ. 0.1693 0.1772 0.0461 0.3563 0.0906 0.0539 0.3720 0.0984 15 typ. 0.00 0.20 4.20 5.20 8 max 2.40 3.00 0.40 10.80 1.15 6.23 4.60 9.40 16.15 0.60 0.5906 typ. 0.0000 0.0079 0.1654 0.2047 8 max 0.0945 0.1181 0.0157 0.0236 0.4252 0.0453 0.2453 0.1811 0.3701 0.6358 Page 12 2001-07-05 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 Page 13 2001-07-05 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPP11N60C3, SPB11N60C3 SPI11N60C3 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 14 2001-07-05 |
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